Comparison ledger
Axcelis NV 10 160 Ion, Varian 160 XP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NV 10 160 IonAxcelis | 160 XPVarian |
|---|---|---|
| OEM | Axcelis | Varian |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | Multiple wafer disks | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV 10 160 Ion | Varian 160 XP |
| Cited variants | — |
|
| Specifications | ||
| Max. Implant Energy | 160 keV[2] | — |
| Beam Current Range | 0.5-8 mA[2] | — |
| End Station | Manual Load[2] | — |
| Automatic Wafer Handling | No AT4[2] | — |
| Source | Standard[2] | — |
| Gas Box | 4 ELB Strings[2] | — |
| Vacuum | Dry Pump + Diffusion Pump[2] | — |
| Control System | Standard Console[2] | — |
| Wafer size | Multiple wafer disks[2] | — |
| Vacuum System | Dry Pump + Diffusion Pump[2] | — |
| Configuration (160 XP Ion variant) | — | 150mm High Current IMP[1] |
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