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Comparison ledger

17099370 Outer strike plateversusNV 8200

Axcelis 17099370 Outer strike plate, Axcelis NV 8200, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
NV 8200Axcelis
OEMAxcelisAxcelis
CategoryIon ImplantationIon Implantation
Wafer size—200mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyAxcelis 17099370 Outer strike plateAxcelis NV 8200
Specifications
ConfigurationUsed with Axcelis GSD 200[1]Gas lines:[2]
Energy config.—from 3 to 250keV (single); up to 750 keV (triple)[2]
Wafer size—Wafer size 200mm with holders for different wafers sizes[2]
Dose—> 1E11at/cm²[2]
Beam current—I < 1mA[2]
Ion sources—3 ion sources with dual vaporizer on each source[2]
Magnet—Dipole magnet 90° - Buckley Systems – de 0 a 75 AMU in full charge[2]
Cryo compressor—CTI Cryogenics 9600[2]
Make—Axcelis[3]
Model—NV 8200[3]
Wafer Sizes—8 inch[4]
Process gas lines—4 process gas lines (BF2/PH3/AsH3/Hydrogen)[2]
Gas line—1 gas line (Argon)[2]
Mass range—0 to 75 AMU in full charge[2]
Target positioning / scanning system—Parallel beam; electrostatic angle correction programmable; tilt 0°-60°[2]
End station—Flat/notch alignment with buffet cassette (3 cassette positions); 3 axis robotic; Pick & Place system[2]
Turbo pumps—Edwards STP 1003C for Source; Pfeiffer HiPace 300 + Pfeiffer TPH 1201 P for Beam Line[2]
Rough pumps—Adixen A 103 P for Source; Adixen A 103 P for Beam Line; Alcatel/Adixen ADS 602 P for End Station[2]
Clamp type—Electrostatic clamp[2]
Software—SPARC V[2]
Soft—SPARC V[2]
Non-functional modules—PC remote[2]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]Equipment inventory listing
  4. [4]Equipment inventory listing