Comparison ledger
Applied Materials Endura 2, Perkin Elmer 4400, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Endura 2Applied Materials | 4400Perkin Elmer |
|---|---|---|
| OEM | Applied Materials | Perkin Elmer |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Endura | Perkin Elmer 44xx |
| Specifications | ||
| Configuration | Liner / Barrier[2] | Pump Exhaust GEEX[10] |
| Software Version | 2.10_692[4] | — |
| System Power Rating | 208VAC/480VAC[4] | — |
| Loading Configuration | 3 TDK Loadports[4] | — |
| Chamber 1 | Impulse PVD[4] | — |
| Chamber 2 | Impulse PVD[4] | — |
| Chamber 3 | Impulse PVD[4] | — |
| Chamber E | DMD[4] | — |
| Chamber F | DMD[4] | — |
| Fi Robot | Yasakawa[6] | — |
| Wafer Carrier | 5x4" Wafer pocket, 4" Tray[9] | — |
| SiC Tray | 4", 6 hole, SiC Carrier (2 pc)[9] | — |
| Dry Pump | (2)[9] | — |
| Wafer Size | 12 inch (300 mm)[2] | 6 inch[13] |
| Category | PVD (Physical Vapor Deposition)[2] | — |
| Front Interface Version | 5.3[4] | — |
| Mainframe | Endura II[4] | — |
| Chamber Configuration | 3 Impulse PVD chambers (Chambers 1-3), 2 DMD chambers (Chambers E and F)[4] | — |
| Robot Type | XP[2] | — |
| Pump | Dedicated[2] | — |
| Handler Type | — | Manual[10] |
| CDA | — | 60-80 psi[10] |
| Chilled Water | — | 68 F, 2 gpm[10] |
| N2 | — | 50 psi[10] |
| HPN2 | — | 60 psi[10] |
| HPAr | — | 10 psi[10] |
| O2 | — | 10 psi[10] |
| Power | — | 208 V, 3 Phase, 60 A[10] |
| Process Type | — | Sputtering / Physical Vapor Deposition[12] |
| Sputtering Types | — | DC, RF, DC-RF bias capable[11] |
| Target Positions | — | Ports for four targets; three utilized (two DC with RF bias, one RF)[11] |
| Load Lock | — | Yes[11] |
| RF Etch Option | — | Yes[11] |
| Pump - Main Chamber | — | Cryotorr 8 cryopump with CTI SC (air-cooled) He compressor[11] |
| Pump - Load Lock | — | Pfeiffer turbopump backed by Trivac rotary vane pump[11] |
| Roughing Pump | — | Ebara A10 roots pump[11] |
| Power Supply | — | Present[10] |
| AC Distribution Box | — | Present[10] |
| Heat Exchanger / Chiller | — | Present[10] |
| Backing Pump | — | Present[10] |
| Cryo Compressor | — | Present[10] |
| Mechanical Pump | — | Present[10] |
| CDA Supply | — | 60-80 psi[10] |
| Chilled Water Supply | — | 68 F, 2 gpm[10] |
| N2 Supply | — | 50 psi[10] |
| HPN2 Supply | — | 60 psi[10] |
| HPAr Supply | — | 10 psi[10] |
| O2 Supply | — | 10 psi[10] |
| Power Requirement | — | 208 V, 3 Phase, 60 A[10] |
| Pump Exhaust | — | GEEX[10] |
| GEM / SECS | — | Present[10] |
| Cables | — | All cables present[10] |
| Standard Manual | — | Included[10] |
| CE Mark | — | No[10] |
| Vintage | — | 2004[10] |
| Equipment type | — | Sputtering system[12] |
| Target ports | — | Four target ports[11] |
| Process modes | — | DC and RF, with DC-RF bias capable[11] |
| Options | — | RF etch option[11] |
| Load lock | — | Load lock[11] |
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