Comparison ledger
Applied Materials DPS II, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | DPS IIApplied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials DPS | Oxford Instruments 100 ICP Fluorine |
| Cited variants |
| — |
| Specifications | ||
| Configuration | Load port (3)[2] | — |
| OEM | Applied Materials[2] | — |
| Model | DPS II[2] | — |
| Category | Etch[1] | — |
| Wafer size | 12 inch[2] | 4 inch, 6 inch, 8 inch (with clamp change)[4] |
| Tool class | second-generation 300mm tool[3] | — |
| Process capability | silicon or metal etch[3] | — |
| Scaleability | scaleable for 200mm wafers[3] | — |
| Onboard subsystems | controller, endpoint, and gas panel located onboard the tool[3] | — |
| Footprint | 20 percent smaller than previous 200mm DPS models[3] | — |
| Demonstrated CD uniformity | less than 10nm across a 300mm wafer, including the edge die[3] | — |
| Demonstrated metal etch CD uniformity | less than five-percent from wafer to wafer and chamber to chamber[3] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[4] |
| Cryo DRIE etch rate | — | up to 5 µm/min[4] |
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