Comparison ledger
Applied Materials Centura Enabler Oxide, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura Enabler OxideApplied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura | Oxford Instruments 100 ICP Fluorine |
| Cited variants | — | |
| Specifications | ||
| Configuration | Server OS Type[2] | — |
| OEM | Applied Materials[4] | — |
| Model | Centura Enabler[4] | — |
| Equipment type | Oxide Etcher[4] | — |
| Server OS Type | 2008 Vintage[2] | — |
| Make | Applied Materials[4] | — |
| Product type | Oxide etcher[4] | — |
| Vintage (documented units) | 2008[1] | — |
| Server OS type (documented units) | 2008[2] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[5] |
| Cryo DRIE etch rate | — | up to 5 µm/min[5] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[5] |
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