Waferpedia

Comparison ledger

0020 18698 Partversus3600

Applied Materials 0020 18698 Part, Tystar 3600, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0020 18698 PartApplied Materials
3600Tystar
OEMApplied MaterialsTystar
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0020 18698 PartTystar 3600
Specifications
ConfigurationDial Cover, Side Local Match, Hdpcvd, Ul[1]—
OEM—Tystar[2]
Model—3600[2]
Equipment type—LPCVD[2]
Process type—LPCVD (Low Pressure Chemical Vapor Deposition)[2]
Number of tubes—Three tubes (Tube 1, Tube 3, and one unnamed)[2]
LSN deposition temperature (default)—835°C[2]
LSN deposition pressure (default)—250 mTorr[2]
LSN ammonia flow (default)—100 sccm (high flow), 20 sccm (low flow)[2]
LSN dichlorosilane flow (default)—100 sccm[2]
LTO deposition temperature (default)—450°C[2]
LTO deposition pressure (default)—400 mTorr[2]
LTO oxygen flow (default)—30 sccm[2]
LTO silane flow (default)—20 sccm[2]
Wafer sizes supported—2 inch, 3 inch, 4 inch, and 6 inch wafers[2]
Boat capacity (Tube 1 LSN)—Up to 25 wafers[2]
Boat capacity (Tube 3 LTO)—Up to 26 wafers[2]
Process gases—Silane (SiH4), Dichlorosilane (DCS), Ammonia (NH3)[2]
Control systems—FCS-10 (Furnace Control System) touchscreen computer, DCS-30 (Data Capture System) computer[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]aggiefab.tamu.eduaggiefab.tamu.edu