Comparison ledger
Applied Materials 0020 12458 Part, Plasma-Therm Versaline, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0020 12458 PartApplied Materials | VersalinePlasma-Therm |
|---|---|---|
| OEM | Applied Materials | Plasma-Therm |
| Category | Deposition | Deposition |
| Wafer size | — | 4" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0020 12458 Part | Plasma-Therm Versaline |
| Cited variants | — | |
| Specifications | ||
| Configuration | Insulator,Side Match,Hdp-Cvd Ultima Plus[4] | 3 Chamber Deposition[2] |
| Asset number | 146526[4] | — |
| Make | Applied Materials[4] | — |
| Model | 0020 12458[4] | — |
| ICP source | — | 1 kW 2 MHz[5] |
| Wafer size | — | up to 4 inches[5] |
| Plasma generators | — | 500 W, 13.56 MHz[5] |
| He-back-side cooling | — | Yes[5] |
| Processable materials | — | Silicon, SiO2, Si3N4, SiOxNy, polymer films such as PMMA, photoresist, polyimide[5] |
| Process types | — | PECVD, CVD, DRIE, ICP etching[1] |
| Number of deposition chambers | — | 3 (2 PCVD Versaline chambers, 1 HDP-CVD Versaline chamber)[2] |
| Silicon etch selectivity to photoresist | — | 100:1[6] |
| Silicon etch selectivity to SiO2 | — | 340:1[6] |
| Silicon etch selectivity to Al2O3 | — | 1000:1[6] |
| Trench aspect ratio | — | 50:1[6] |
| Isolated line aspect ratio | — | 200:1[6] |
| Endpoint detection | — | Optical emission spectroscopy (OES) for SOI[6] |
| PECVD Capability | — | Yes[1] |
| CVD Capability | — | Yes, 3 chamber deposition[2] |
| Chambers | — | PCVD Versaline Chambers (x2), HDP-CVD Versaline Chamber[2] |
| Additional Hardware | — | PM Modules (x3), Brooks MX 600, HDD, Versaline Software, Manuals[2] |
| Etch Capability | — | DRIE of silicon[6] |
| Etch Selectivity to Photoresist | — | 100:1[6] |
| Etch Selectivity to SiO2 | — | As high as 340:1[6] |
| Etch Selectivity to Al2O3 | — | Approximately 1000:1[6] |
| Achievable Trench Aspect Ratio | — | Up to 50:1[6] |
| Achievable Isolated Line Aspect Ratio | — | 200:1[6] |
| Endpoint Detection | — | Optical emission spectroscopy (OES) for SOI endpoint detection[6] |
| Substrate Compatibility | — | Silicon, Germanium[6] |
| Etch Masks | — | Photoresists, ebeam resists, silicon oxide, ALD Al2O3[6] |
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