Waferpedia

Comparison ledger

0020 12458 PartversusP 5000 Mark II

Applied Materials 0020 12458 Part, Applied Materials P 5000 Mark II, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0020 12458 PartApplied Materials
P 5000 Mark IIApplied Materials
OEMApplied MaterialsApplied Materials
CategoryDepositionDeposition
Wafer size—Wafer Orienter
Process node——
Introduced—1991
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0020 12458 PartApplied Materials P 5000 Mark II
Cited variants—
  • P 5000 Mark II PECVD, 8" DxZ[1]
  • P 5000 Mark II PECVD, 8" DxL[2]
  • P 5000 Mark II PECVD, 8"[3]
  • P 5000 Mark II PECVD, 6"[4]
  • P 5000 Mark II (1991 vintage)[3]
  • P 5000 Mark II (2010 vintage)[4]
  • P 5000 Mark II (CVD variant)[5]
Specifications
ConfigurationInsulator,Side Match,Hdp-Cvd Ultima Plus[6]DxZ[1]
Asset number146526[6]—
MakeApplied Materials[6]—
Model0020 12458[6]P 5000 Mark II[1]
Software—b6.02[3]
Install Type—Through Wall[4]
Wafer size—Wafer Orienter[4]
Phase—Phase 3 Robot[4]
Storage Elevator—29 slots[4]
Floppy Drive—3 1/2[4]
Gas Panel Type—28[4]
Load Lock Pump—Edwards iH 80 Series[4]
Voltage—208VAC 50/60Hz[5]
Qty 3 - DLH Delta PECVD Silane—Silane Oxide Deposition[9]
Qty 3 - DLH PECVD Silane—Silane Oxide Deposition[10]
Wafer Size (6 inch)—6 inch[4]
Wafer Size (8 inch)—8 inch[1]
Process—Plasma-Enhanced Chemical Vapor Deposition (PECVD)[1]
Chamber A—Silane SiO2 PECVD standard 200mm chamber[5]
Chamber B—Silane SiN PECVD standard 200mm chamber[5]
Software Version—b6.02[3]
Power—208VAC 50/60Hz[5]
Robot—Phase 3[4]
Cassette Handler—Phase 3[4]
Wafer Orienter—Yes[4]
Gas Lines—N2, He, N2O, NH3, 2% SiH4/Bal He, CF4[4]
Position A—Silane DCVD[4]
Position B—Silane DCVD[4]
Position C—Silane DCVD[4]
Position D—Empty[4]
RF Match Type—Phase IV[4]
Lid Type—Bolddown[4]
Endpoint—Standard[4]
Line 1—N2, 3000 sccm, Brooks 5850 / 5964[4]
Line 2—He, 5000 sccm, Ditto[4]
OEM—Applied Materials[1]
Process type—PECVD (Plasma-Enhanced Chemical Vapor Deposition)[1]
Wafer sizes—8 inch[1]
Wafer orienter—Present[4]

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Sources (11)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]Equipment inventory listing
  3. [3]Equipment inventory listing
  4. [4]Equipment inventory listing
  5. [5]Equipment inventory listing
  6. [6]inventory listing
  7. [7]inventory listing
  8. [8]inventory listing
  9. [9]inventory listing
  10. [10]inventory listing
  11. [11]inventory listing