Comparison ledger
Applied Materials 0010 47763, Tokyo Electron TE 8401 Dry, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | TE 8401 DryTokyo Electron |
|---|---|---|
| OEM | Applied Materials | Tokyo Electron |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Tokyo Electron TE 8401 |
| Cited variants | — | |
| Specifications | ||
| Configuration | 2nd Source New[3] | Single chamber[1] |
| Type | Monopolar Dual Heated[4] | Dry Etcher[6] |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[5] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[4] | — |
| Model | 0010-47763[3] | TE 8401[6] |
| OEM | Applied Materials[3] | Tokyo Electron[6] |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[4] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[4] | — |
| Quantity available (source) | 1[4] | — |
| Gas | — | He, O2, CF4, HBr, CL2[1] |
| OS | — | EPROM based system[1] |
| Missing | — | pumps[2] |
| Wafer Size | — | 8 inch (200 mm)[6] |
| Chamber Configuration (Poly Etch) | — | Single chamber[1] |
| Chamber Configuration (Nitride Etch) | — | Dual chamber[2] |
| Process Gases (Poly Etch) | — | He, O2, CF4, HBr, Cl2[1] |
| Process Gases (Nitride Etch) | — | HBr, Cl2[2] |
| Operating System (Poly Etch) | — | EPROM based system[1] |
| Operating System (Nitride Etch) | — | JDOS[2] |
| Chamber Configuration | — | Single chamber[1] |
| Process Type | — | Poly etch[1] |
| Gases | — | He, O2, CF4, HBr, Cl2[1] |
| Operating System | — | EPROM based system[1] |
| Vintage | — | 1996[7] |
| Process | — | Poly etch[1] |
| Chamber configuration | — | Dual chamber[2] |
| Operating system | — | EPROM based[1] |
| Category | — | Dry Etcher[6] |
| Control system | — | EPROM based system[1] |
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