Comparison ledger
Applied Materials 0010 47763, Tegal 903ACS, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | 903ACSTegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | 75 mm, 100 mm, 125 mm, and 150 mm diameter wafers; 4-inch square wafers |
| Process node | — | 1 micron |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Tegal 903ACS |
| Cited variants | — |
|
| Specifications | ||
| Configuration | 2nd Source New[2] | — |
| Type | Monopolar Dual Heated[3] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[4] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3] | — |
| Model | 0010-47763[2] | — |
| OEM | Applied Materials[2] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[3] | — |
| Quantity available (source) | 1[3] | — |
| Process type | — | Reactive ion etching (RIE)[1] |
| Reactor type | — | Narrow gap diode reactor system[1] |
| Substrates | — | Silicon, gallium-arsenide (Ga-As), indium-phosphide (In-P), and silicon-germanium (Si-Ge)[1] |
| Materials etched | — | Silicon dioxide, silicon nitride, and silicon carbide[1] |
| Wafer sizes | — | 75 mm, 100 mm, 125 mm, and 150 mm diameter wafers; 4-inch square wafers[1] |
| Minimum feature size | — | 1 micron[1] |
| Etch applications | — | Tightly controlled, anisotropic etching of silicon dioxide and silicon nitride insulating layers[1] |
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