Comparison ledger
Applied Materials 0010-16392 ESC Assembly, Oxford Instruments PlasmaPro 100 Cobra ICP-RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-16392 ESC AssemblyApplied Materials | PlasmaPro 100 Cobra ICP-RIEOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-16392 ESC Assembly | Oxford Instruments PlasmaPro 100 |
| Specifications | ||
| OEM | Applied Materials[1] | Oxford Instruments[3] |
| Model | 0010-16392[1] | PlasmaPro 100 Cobra ICP-RIE[3] |
| Type | ESC Assembly[1] | — |
| Wafer Size | 300 mm[2] | — |
| Electrode Configuration | Dual[2] | — |
| Voltage | — | 208 V, 3 Phase, 50/60 Hz[3] |
| Configuration | — | Configured for 6" substrates[3] |
| Wafer size support (200 mm platform) | — | 200 mm (8 in) platform; compatible with all wafer sizes up to 200 mm[4] |
| Wafer size (configured system) | — | 6 inch substrates[3] |
| Substrate temperature range | — | -150°C to +400°C[4] |
| ICP source sizes | — | 65 mm, 180 mm, 300 mm[4] |
| Etch chemistries | — | SF6, CHF3, CF4, O2[5] |
| Electrical requirements | — | 208 V, 3 phase, 50/60 Hz[3] |
| Included components (example configuration) | — | Advanced Energy paramount MF 5003 RF Generator; Pfeiffer Adixen Magpower Turbopump Controller; Pfeiffer Adixen A 124 H Vacuum Pump; Pfeiffer Adixen ZCP 15 G Vacuum Pump; Gas Box; Control Computer & LCD Monitor with OS PTIQ Version 2021.12.2.0[3] |
| Upgrades/accessories available | — | Dry pump N2 standby, gas pod, Logviewer software, optical end point detectors, soft pump, turbomolecular vacuum pump, X20 Control System, Advanced Energy Paramount generator, automatic pressure control, dual CM gauge switching, LN2 autochangeover, TEOS liquid level sensing[4] |
| Process type | — | Inductively Coupled Plasma - Reactive Ion Etch[3] |
| Configured substrate size | — | 6" substrates[3] |
| Wafer size platform | — | 200mm platform[4] |
| Maximum wafer size | — | up to 200mm[4] |
| Plasma source | — | high-density inductively coupled plasma[6] |
| Etch performance | — | fast etch rates[6] |
| Process characteristics | — | excellent uniformity, high-throughput, high-precision and low-damage processes[6] |
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