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0010-13622 RF Match forversusSIV 500

Applied Materials 0010-13622 RF Match for, Ulvac SIV 500, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-13622 RF Match forApplied Materials
SIV 500Ulvac
OEMApplied MaterialsUlvac
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-13622 RF Match forUlvac SIV 500
Cited variants—
Specifications
ConfigurationHigh Efficiency HE RF Match-Bias[2]—
Model0010-13622[2]—
Product TypeRF Match for PVD (Physical Vapor Deposition)[2]—
FeatureHigh Efficiency HE RF Match-Bias[2]—
Process module stations—3 (P1, P2, P3)[1]
Pulsed DC power supply power—5 kW[1]
Substrate size capability—up to 1000mm x 1000mm[3]
P3 sputtering power supply frequency—13.56 MHz[1]
Cryo pump size—12 inch[1]
Turbo/water pump size—12 inch[1]
Voltage—208 VAC +/- 5%, 3 phase, 60 Hz, 3 wire plus ground, 145.5 A[3]
Chamber dimensions—500mm x 420mm[1]
Magnetron sources—3[1]
DC planar sources—1[1]
Substrate diameter max—8 inches[1]
Carrier size—500mm x 500mm[3]
Process modules—3-station (P1, P2, P3)[1]
Power supply—5 kW pulsed DC[1]
P3 dedicated to—ITO or other TCF with O₂ MFC and 13.56 MHz RF supply[1]
Chamber size (base machine)—500 mm × 420 mm[1]
Maximum substrate size—1000 mm × 1000 mm[3]
Pallet size (configured)—500 mm × 500 mm[3]
Supported wafer sizes—100 mm, 150 mm, 200 mm, 300 mm[3]
Pumping—Roughing pump, turbomolecular/water pump, Ulvac 12" cryo pump[1]
Sputter sources—Three magnetron sources and one DC planar source on XYZ stage[1]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]tarasemi.comtarasemi.com
  2. [2]inventory listing
  3. [3]fabsurplus.comfabsurplus.com