Comparison ledger
Applied Materials 0010-03485 Magnet Assy, Samsung DDR4 DRAM Chips, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-03485 Magnet AssyApplied Materials | DDR4 DRAM ChipsSamsung |
|---|---|---|
| OEM | Applied Materials | Samsung |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 2011– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-03485 Magnet Assy | Samsung DDR4 DRAM Chips |
| Specifications | ||
| Configuration | WP AL 300mm PVD[1] | — |
| OEM | Applied Materials[1] | — |
| Model | 0010-03485[1] | — |
| Description | MAGNET ASSY, WP AL 300MM PVD[2] | — |
| Process | PVD[3] | — |
| Wafer size | 300mm[4] | — |
| Version | Spares[4] | — |
| Part Number | 0010-03485[1] | — |
| Manufacturer | Applied Materials[1] | — |
| Process Type | PVD (Physical Vapor Deposition)[1] | — |
| Application (Material) | Aluminum (AL)[1] | — |
| Wafer Diameter (associated) | 300 mm[1] | — |
| Type | — | Synchronous dynamic random-access memory (SDRAM)[5] |
| Generation | — | 4th generation[5] |
| Release date | — | 2014[5] |
| Operating voltage | — | 1.2 V[5] |
| Maximum data transfer rate | — | 3,200 Mbps[6] |
| Bank groups | — | 4 bank groups (total 16 banks)[6] |
| System memory bandwidth | — | 1 TB/s[6] |
| Node process | — | 1x nm[6] |
| Prefetch buffer | — | 8n-prefetch architecture[5] |
| Clock rate | — | 800–1600 MHz[5] |
| Transfer rate range | — | 1600 MT/s to 3200 MT/s[5] |
| Bandwidth range | — | 12.8 GB/s to 25.6 GB/s[5] |
| Standard transfer rates | — | 1600, 1866, 2133, 2400, 2666, 2933, 3200 MT/s[5] |
| Internal banks | — | 16 (4 bank select bits)[5] |
| Ranks per DIMM | — | Up to 8[5] |
| ECC support | — | Optional[5] |