Comparison ledger
Aixtron AIX 2600 G 3 MOCVD Reactor, Applied Materials 0010-13622 RF Match for, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | AIX 2600 G 3 MOCVD ReactorAixtron | 0010-13622 RF Match forApplied Materials |
|---|---|---|
| OEM | Aixtron | Applied Materials |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Aixtron AIX 2600 | Applied Materials 0010-13622 RF Match for |
| Specifications | ||
| Configuration | 8 x 2", x 3", x 4"[1] | High Efficiency HE RF Match-Bias[4] |
| Wafer sizes | 2, 3, 4 inch[1] | — |
| Wafer capacity | 8 x 2", 8 x 3", 8 x 4"[1] | — |
| Substrate materials | GaAs or InP[3] | — |
| Hydride source count | 7 or 9[1] | — |
| Metal-organic source count | 8 or 9[1] | — |
| OEM | Aixtron[1] | — |
| Model | AIX 2600 G 3[1] | 0010-13622[4] |
| Equipment type | MOCVD Reactor[1] | — |
| Hydride / metal-organic configuration | 7 hydrides and 8 metal-organics; or 9 hydrides and 9 metal-organics[3] | — |
| Product Type | — | RF Match for PVD (Physical Vapor Deposition)[4] |
| Feature | — | High Efficiency HE RF Match-Bias[4] |
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