Comparison ledger
ABM -407B-1-S-CES293 Robot, KLA Surfscan 6420, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | ||
|---|---|---|
| OEM | ABM | KLA |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 2023 End of life |
| Control system | — | — |
| Generation | — | — |
| Family | ABM -407B-1-S-CES293 Robot | KLA Surfscan 6420 |
| Specifications | ||
| Model | ABM-407B-1-S-CES293[1] | — |
| Description | ROBOT[1] | — |
| Refurbished RTP RTA | AG Associates 4100, 4108, 8108, 8800, 8800i,210, 310, 410, 610, 610I, MPT RTP-600S, 800S, RTP-3000[1] | — |
| KLA-Tencor Spare Parts and Service | RS-35C,RS-55,RS-75,RS-100,UV-1050,UV-1080,UV-1250,UV-1280,ASET F5 / F5X,AIT Systems,HRP-220 Stylus Profiler[1] | — |
| Refurbished Isotropic Plasma Etcher | Matrix, Tegal, Lam Research, Branson/IPC, PlasmaTherm[1] | — |
| Refurbished PECVD, ALD Equipment | Cambridge, Oxford PlasmaLab , Plasma-Therm, STS/SPTS, AMAT[1] | — |
| Refurbished Mask Aligner | Canon Neutronix PLA501/545, Suss MA200CC, MA8BA8 GEN3, MA8BA8 GEN2, MA8BA8, MA200E[1] | — |
| Refurbished Bonding | SUSS SB6E, SUSS SB8E, EVG 620 BA, EVG EV501, West Bond 7200AR 7400A[1] | — |
| Refurbished Wafer Prober | Electroglas EG 4090u+, EG 4090, EG 2001X, EG 1034X, Cascade PS-21[1] | — |
| Defect sensitivity (polished silicon) | — | Better than 0.12 µm at 95% capture rate[2] |
| Defect sensitivity (most surfaces) | — | Better than 0.12 µm[3] |
| Particle size range | — | 0.15 µm to greater than 3 µm[4] |
| Throughput | — | Up to 100 wafers per hour (200 mm)[4] |
| Repeatability | — | Within 1%, 1σ (mean count >500, 0.204 µm PSL)[4] |
| Illumination source | — | 30 mW Argon-Ion laser, 488 nm[2] |
| Operating software | — | Windows 98[2] |
| Substrate sizes | — | 2", 3", 4", 6", 8" wafers[2] |
| Substrate thickness | — | Adjustable up to 12 mm[2] |
| Material compatibility | — | Any surface that scatters less than 90% of incident light[2] |
| Cassette handling | — | Single puck handling from single cassette or platform[2] |
| Batch size | — | 1-25 wafers[4] |
| Process temperature | — | Room temperature[4] |
| Substrate materials | — | Silicon, thin layers of oxide, nitride, polymer/resist[4] |
| Power requirements | — | 208V, 60 Hz, 1 phase, 16A[5] |
| Haze sensitivity | — | 0.02 ppm[6] |
| Accuracy | — | Within 1%[6] |